| PART |
Description |
Maker |
| 10ELS6TA1B2 |
0.77 A, 600 V, SILICON, SIGNAL DIODE
|
NIHON INTER ELECTRONICS CORP
|
| MUR160 |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
|
MICROSEMI CORP-COLORADO
|
| 1N4005ID143 |
1 A, 600 V, SILICON, SIGNAL DIODE
|
NXP SEMICONDUCTORS
|
| FS1J-LTP |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC
|
MICRO COMMERCIAL COMPONENTS
|
| GP08J/56 GP08G/66 GP08G/64 |
0.8 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
0.8 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL
|
Vishay Beyschlag
VISHAY SEMICONDUCTORS
|
| HSM106 HSM101 HSM102 HSM103 HSM104 HSM105 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere) 1 A, 50 V, SILICON, SIGNAL DIODE
|
RECTRON[Rectron Semiconductor]
|
| RG2A AG01 |
1 A, 600 V, SILICON, SIGNAL DIODE
0.7 A, 400 V, SILICON, SIGNAL DIODE
|
|
| MUR140-T MUR160-A |
1.0A SUPER-FAST RECTIFIER 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
|
Diodes Inc.
Diodes, Inc.
|
|
